Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies
|Author(s)||Baudet E.1, Cardinaud C.2, Girard A.2, Rinnert Emmanuel3, Michel K.4, Bureau B.1, Nazabal V.1|
|Affiliation(s)||1 : Univ Rennes 1, Inst Sci Chini Rennes, UMR CNRS 6226, Equipe Verres & Ceram, F-35042 Rennes, France.
2 : Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France.
3 : IFREMER, Lab Detect Capteurs & Mesures, Dept Rech & Dev Technol, F-29280 Plouzane, France.
4 : Bur Rech Geol & Minieres, Direct Eau Environm & Ecotechnol, Unite BioGeochim Environm & Qualite Eau, F-45060 Orleans, France.
|Source||Journal Of Non-crystalline Solids (0022-3093) (Elsevier Science Bv), 2016-07 , Vol. 444 , P. 64-72|
|WOS© Times Cited||31|
|Keyword(s)||Chalcogenide glass, Thin films, Radio-frequency magnetron sputtering, Raman spectroscopy, X-ray photoelectron spectroscopy, Structure|
|Abstract||Chalcogenide thin films (GeSe2)100 − x(Sb2Se3)x (with x = 10 and 50) were deposited by Radio-frequency (RF) magnetron sputtering. In order to study the impact of Ar pressure on the structure and the composition of selenide thin films structural properties of thin films and targets were investigated by means of Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). Under low pressure (5 · 10− 3 mbar), the increase of wrong bonds like Ge(Sb)-Ge(Sb) was confirmed by Raman and also XPS for both composition. The observed structural changes with Ar pressure are linked with modification of the composition of the selenide films analyzed by EDS and XPS. Furthermore for higher Ar pressure (5 · 10− 2 mbar), RF sputtered thin film and target structure present a great similarity. These differences driven by Ar pressure modification are probably related to distinctive sputtering rate and mean free path of the particles ejected from target for the different Ar pressures.|